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NAND Product Development Engineer
Solidigm · Minhang District, China
About The Role
Experienced engineer familiar with NAND component test, will responsible for new generation NAND production introduction, setup component test strategy to support product qualification. lead yield improvement during NPI and HVM sustaining.
Major responsibilities include
- 1) Develop, validate, and deploy burn‑in and high‑speed I/O test specifications, methodologies, and test flows for NAND flash components across high‑volume manufacturing platforms.
- 2) Partner closely with test development engineers to ensure robust assessment of test code validation plan, check out data review and tape release plan.
- Communicate key component test information with cross‑functional stakeholders including yield roadmap/projection, test coverage etc
- Analyze component test and manufacturing data to identify yield trends, anomalies, and opportunities for product, process, or test improvement.
5)  Collaborate with design, process, and reliability teams to troubleshoot complex test issue and optimize test methodologies to improve coverage, efficiency, and cycle time while supporting yield enhancement and failure analysis activities.
Minimum Qualifications
- Master’s degree in Electrical/Electronic Engineering, Computer Engineering, Semiconductor Circuit Design, or related fields.
- 5+ years of experience in logic/memory product engineering or test engineering. Proficient in statistical data analysis and electrical failure analysis to segment and determine root cause of test failures.
- Knowledge of NAND Flash memory technology, including architecture and operation.
- Functional knowledge of burn-in and high speed I/O test platforms and architectures.
- Excellent communication and teamwork abilities, with experience working in a multi-disciplinary engineering environment.
- Proven track record of technical leadership and ability to work independently.
Preferred Qualifications
- 10+ years of experience in memory product/test engineering, with majority of it in NAND Flash.
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