Analog Design Engineer
Hctz · Brno, South Moravia, Czech Republic
About The Role
We are seeking a highly motivated Analog Design Engineer with 5–8 years of experience in non-volatile memory (NVM) design, including EEPROM, Flash, or emerging memories such as ReRAM. The candidate will contribute to the design and development of high-performance, reliable memory IPs for advanced applications, including automotive and industrial systems.
Design and develop analog and mixed-signal circuits for NVM IPs (EEPROM, Flash, ReRAM) Architect and implement key building blocks such as: Charge pumps, voltage regulators, bandgaps, oscillators Sense amplifiers, reference circuits, and biasing schemes Collaborate with digital, layout, and validation teams to deliver silicon-proven designs Perform circuit simulations (DC, AC, transient, Monte Carlo, corner analysis) to ensure robustness across PVT conditions Drive design reviews, failure analysis, and silicon debug activities Support test vehicle development and participate in characterization and qualification Ensure compliance with reliability and automotive standards (e.g., AEC-Q100 where applicable) Contribute to design methodology improvements and documentation
Bachelor’s or Master’s degree in Electrical Engineering or related field 5–8 years of experience in analog/mixed-signal IC design Strong experience in NVM technologies such as EEPROM, Flash, or ReRAM Solid understanding of: Device physics and reliability (e.g., breakdown, aging, retention) High-voltage analog design techniques Proficiency in industry-standard tools (e.g., Cadence Virtuoso, Spectre, APS) Experience with layout collaboration and parasitic-aware design Strong debugging and problem-solving skills
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