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内存功耗与性能测试工程师-Memory Power Consumption and Performance Test Engineer(J19575)

ChangXin Memory (CXMT) · 安徽省·合肥市

Quality AssuranceImported listingfull-time5 months ago

About The Role

  1. 功耗测试流程搭建：主导DDR/LPDDR DRAM功耗与性能测试分析，针对手机端DOU场景设计并实施标准化测试流程，输出测试结果与优化建议；
  2. 模型搭建与验证：分析DRAM工作原理，针对不同系统应用场景完成功耗模型的搭建、校准与验证，为产品前期功耗预估提供数据支撑与决策依据；
  3. 根因分析与优化：研究平台电压、工作频率、工作模式等关键因素对DRAM功耗的影响机制，定位功耗异常及时序裕量不足等复杂问题，输出根因分析报告与改善方案；
  4. 跨团队协作闭环：协同电路设计、模组设计等团队推动功耗优化措施落地，完成问题闭环与技术方案评估；
  5. 方法沉淀与数据库建设：沉淀测试方法，建设功耗数据库，迭代模型精度与测试效率，保障新品内存功耗指标达标。
  6. 教育背景与专业知识：硕士及以上学历，电子/集成电路/电子工程等相关专业；
  7. 专业技能与资格：能使用功耗测试工具完成DRAM功耗与性能分析，能搭建并校准功耗模型，具备C语言或脚本编写能力，能处理测试数据分析；
  8. 行业与专业经验：具备3年及以上半导体或内存功耗与性能测试分析经验，有从测试规划到根因分析的全流程经验，有SoC或存储芯片功耗分析与优化经验者优先；
  9. 项目/任务成果：主导过至少2个DRAM功耗测试项目，完成模型搭建与验证并推动优化落地；
  10. 其他要求：具有系统性拆解复杂功耗问题的能力，能在快节奏研发环境中保持高效工作。

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